Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD3N80G/TMU3N80G VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.
2 W(max) @ VGS= 10 V D-PAK I-PAK D Device TMD3N80G/TMU3N80G Package D-PAK/I-PAK G S Marking TMD3N80G/TMU3N80G Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Oper...

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