Part Number
|
TMD4N65AZG |
Manufacturer
|
TRinno |
Description
|
N-channel MOSFET |
Published
|
Jun 16, 2016 |
Detailed Description
|
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
|
Datasheet
|
TMD4N65AZG
|
Overview
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
TMD4N65AZ(G)/TMU4N65AZ(G)
BVDSS 650V
N-channel MOSFET
ID RDS(on)
4.
0A
2.
4W
I-PAK
Device TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG
Package D-PAK/I-PAK D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt ...
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