Part Number
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SSP5N60 |
Manufacturer
|
SOURCESEMI |
Description
|
600V N-Channel MOSFET |
Published
|
Jun 16, 2016 |
Detailed Description
|
600V N-Channel MOSFET
Features
■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast sw...
|
Datasheet
|
SSP5N60
|
Overview
600V N-Channel MOSFET
Features
■ 4.
5A,600v,RDS(on)=2.
5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability
SSP5N60/SSF5N60C
General Description
This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.
low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS
Absolute Maximum Ratings
Symbol
Parameter
VDSS Drain to Source ...
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