Part Number
|
TMT3N30G |
Manufacturer
|
TRinno |
Description
|
N-channel MOSFET |
Published
|
Jun 16, 2016 |
Detailed Description
|
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
|
Datasheet
|
TMT3N30G
|
Overview
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
D
Device TMT3N30G
Package SOT223
TMT3N30G
VDSS = 330V @Tjmax ID = 3A RDS(on) = 2.
15 W(max) @ VGS= 10 V RDS(on) = 1.
73 W(typ) @ VGS= 10 V
S D G
Marking TMT3N30G
D
G S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1) Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage...
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