Part Number
|
TGAN40N120FDR |
Manufacturer
|
TRinno |
Description
|
Field Stop Trench IGBT |
Published
|
Jun 17, 2016 |
Detailed Description
|
Features
• 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
|
Datasheet
|
TGAN40N120FDR
|
Overview
Features
• 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • Short Circuit Withstanding Time 5μs • RoHS Compliant • JEDEC Qualification
Applications
UPS, Welder, Inverter, Solar
TGAN40N120FDR
Field Stop Trench IGBT
E GC
Device TGAN40N120FDR
Package TO-3PN
Marking TGAN40N120FDR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Power Dissipation
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum ...
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