isc Silicon
PNP Darlington Power
Transistor
2SB897
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-
: VCE(sat) = -1.
5V(Max.
) @IC= 10A ·Complement to Type 2SD1210 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current- Continuous
...