INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD325
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.
5V(Max) @IC= 0.
5A
APPLICATIONS ·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO VCEO VEBO
Collector-Base Voltage
3DD325A Collector-Emitter Voltage
3DD325B
Emitter-Base Voltage
50 30 50 4
V V V
IC Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.
5 A
1.
8 W
25
150 ℃
-55~150 ℃
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