| Part Number | 3N80C |
| Manufacturer | Fairchild Semiconductor |
| Title | FQP3N80C |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advan... |
| Features |
• 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog... |
| File Size | 698.76KB |
| Datasheet |
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3N80 : isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Plused 12 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·.
3N80 : (3A, 800Volts) The Nell 3N80 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . FEATURES RDS(ON) = 3.80Ω (typ.) @ VGS = 10V Ultra low gate charge(35nC max.) Low reverse transfer capacitance (CRSS = 23pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (3N80A) GDS TO-220F (3N80A.
3N80 : The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) 4.2Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TF2-T 3N80G-TF2-T 3N80L-TM3-T 3N80G-TM3-T 3N80L-TMS4-R 3N80G-TMS4-R 3N80L-TN3-R 3N80G-TN3-R Note: Pin Assig.
3N80A : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
3N80Z : The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) 4.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N80ZL-TF1-T 3N80ZG-TF1-T 3N80ZL-TN3-R 3N80ZG-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-912.D 3N80Z Power MOSFET .