SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES High Breakdown Voltage and High Current : VCEO=80V, IC=1A.
Low VCE(sat) Complementary to KTB1241.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING 100 80 5 1 -1 1 150
-55 150
UNIT V V V A A W
O D
KTD1863
EPITAXIAL PLANAR
NPN TRANSISTOR
BD
G JA R
P DEPTH:0.
2
C
Q K
FF
HH M EM
123
HL
NN 1.
EMITTER
2.
COLLECTOR
3.
BASE
DIM MILLIMETERS
A 7.
20 MAX
B 5.
20 MAX S C 0.
60 MAX
D 2.
50 MAX
E 1.
15 MAX
F ...