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Part Number
|
KMA3D6N20SA |
|
Manufacturer
|
KEC |
|
Description
|
N-Channel MOSFET |
|
Published
|
Jun 21, 2016 |
|
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching t...
|
|
Datasheet
|
KMA3D6N20SA
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for portable equipment.
FEATURES VDSS=20V, ID=3.
6A Drain-Source ON Resistance RDS(ON)=45m (Max.
) @ VGS=4.
5V RDS(ON)=65m (Max.
) @ VGS=2.
5V Super Hige Dense Cell Design
KMA3D6N20SA
N-Ch Trench MOSFET
E L BL
DIM MILLIMETERS A 2.
93+_ 0.
20
B 1.
30+0.
20/-0.
15
A G H
D
23
C 1.
30 MAX D 0.
40+0.
15/-0.
05
E 2.
40+0.
30/-0.
20 1 G 1.
90
H 0.
95
J 0.
13+0.
10/-0.
05
K 0.
00 ~ 0.
10 Q
PP
L 0.
55
M 0.
20 MIN
N 1.
00+0.
20/-0.
10
C N K J
P7
Q 0.
1 MAX
M
MAXIMUM RATING (Ta=25 )
CHARACTER...
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