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Part Number
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KU086N10F |
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Manufacturer
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KEC |
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Description
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N-Channel MOSFET |
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Published
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Jun 21, 2016 |
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Detailed Description
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching...
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Datasheet
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KU086N10F
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Overview
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications
FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.
6m (Max.
) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KU086N10P KU086N10F
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
100 V 20 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Rec...
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