SEMICONDUCTOR
TECHNICAL DATA
KF19N20F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)(Max)=0.
155 @VGS=10V Qg(typ.
)= 21nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
200 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diod...