SEMICONDUCTOR
TECHNICAL DATA
KTA1862D/L
EPITAXIAL PLANAR
PNP TRANSISTOR
HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES High Breakdown Voltage, Typically : BVCEO=-400V.
Low Collector Saturation Voltage.
: VCE(sat)=-0.
5V(Max.
) at (IC=0.
5A) High Switching Speed, Typically : tf= 0.
4 S at IC=-1A Wide Safe Operating Area (SOA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
Collector Current
DC Pulse
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP
PC
Tj Tstg
RATING -400 -400 -7 -2.
0 -4.
0 1.
0 10 150
-55 150
UNIT V V V
A
W
Q
A C
H ...