J B
ED
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High Voltage : VCEO=-120V.
High Transition Frequency : fT=120MHz(Typ.
).
1W(Monunted on Ceramic Substrate).
Small Flat Package.
Complementary to KTC4373.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-120
Collector-Emitter Voltage
VCEO
-120
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -800
Base Current
IB -160
Collector Power Dissipation
PC 500 PC* 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
PC* : KTA1661 mounted on ceramic substrate (250mm2x0.
8t)
UNIT V V V mA mA mW W
KTA1661
EPITAXIAL PLANAR
PNP TRANSISTOR
AC H
G
DD K
FF
1 23
DI...