SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES High Current.
Low VCE(sat).
: VCE(sat) 250mV at IC=200mA/IB=10mA.
Complementary to KTA2012V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS.
VCBO VCEO VEBO
IC ICP * PC Tj Tstg
RATING 15 12 6 500 1 100 150
-55 150
UNIT V V V mA A mW
A G H
KTC4072V
EPITAXIAL PLANAR
NPN TRANSISTOR
K
JD
E B
2 DIM MILLIMETERS A 1.
2 +_0.
05
B 0.
8 +_0.
05 1 3 C 0.
5 +_ 0.
05
D 0.
3 +_ 0.
05 E 1.
2 +_ 0.
05 G 0.
8 +_ 0.
05
PP
H 0.
40 J 0.
12+_ 0.
05 K 0.
2 +_ 0.
05
P5
1.
EM...