isc Silicon
NPN Planar Epitaxial Overlay
Transistor
2N3866
DESCRIPTION · High Gain Bandwidth Product
fT= 500 MHz (Min.
)
· Low Collector Capacitance;
CC = 3 pF Max.
Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS · Designed for use in output, driver or pre-driver stages in
VHF and UHF equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
55
V
VCER Collector-Emitter Voltage RBE= 10Ω
55
V
VCEO Collector-Emitter Voltage
30
V
VEBO Emitter-Base Voltage
3.
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
0.
4
A
3.
5
W
TJ
Junction Temperature
200
℃
Tst...