isc Silicon
PNP Power
Transistor
2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.
) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
-130
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-8
A
80
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
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