INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-140V(Min) ·Good Linearity of hFE ·Low Saturation Voltage
APPLICATIONS ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-140 -5
-0.
05 2
150 -55~150
V V A W ℃ ℃
isc Product Specification
2SA1173
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INCHANGE Semiconductor
isc Silico...