isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
VCEO= -150V(Min) ·Complement to Type 2SC4368 ·Full-mold package that does not require an insulating
board or bushing when mounting.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC
Collector Current-Continuous
-1.
5
A
IB
Base Current-Continuous
Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25...