Part Number
|
PFP18N50 |
Manufacturer
|
Power Device |
Description
|
500V N-Channel MOSFET |
Published
|
Jun 23, 2016 |
Detailed Description
|
Feb 2009
PFP18N50/PFF18N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremel...
|
Datasheet
|
PFP18N50
|
Overview
Feb 2009
PFP18N50/PFF18N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 48.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
26 Ω (Typ.
) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP18N50/PFF18N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 0.
26 Ω ID = 18 A
Drain {
Gate
{
●
◀▲
● ●
Source
{
TO-220
TO-220F
1 2 3
1.
Gate 2.
Drain 3.
Source
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specifie...
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