INCHANGE Semiconductor
isc Silicon
NPN RF
Transistor
isc RF Product Specification
2SC3130
DESCRIPTION ·High Current-Gain Bandwidth Product ·Small Output Capacitance
APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
15 V
10 V
3V
50 mA
0.
15 W
150 ℃
-55~150
℃
isc website：www.
iscsemi.
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INCHANGE Semiconductor
isc Silicon
NPN RF
Transistor
isc RF Product Spec...