Part Number
|
MTB2D0N04E3 |
Manufacturer
|
Cystech Electonics |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Jun 24, 2016 |
Detailed Description
|
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB2D0N04E3
Spec. No. : C072E3 Issued Date : 2015.12....
|
Datasheet
|
MTB2D0N04E3
|
Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB2D0N04E3
Spec.
No.
: C072E3 Issued Date : 2015.
12.
25 Revised Date : 2016.
03.
04 Page No.
: 1/ 8
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.
5V, ID=20A
40V 84A
17.
3A 2.
2 mΩ(typ) 2.
5 mΩ(typ)
Symbol
MTB2D0N04E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTB2D0N04E3-0-UB-X
Package
TO-220 (RoHS compliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for ...
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