INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
2SD1314
DESCRIPTION ·High DC Current Gain
:hFE= 100(Min) @ IC= 15A ·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 2.
0V (Max) @ IC= 15A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power switching and motor control
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Current-peak
IB
Base Current
PC
Collector Power Diss...