isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO = 500V(Min.
) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current
7
A
ICM
Collector Current-peak
14
A
IB
Base Current
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
0.
5
A
1.
4 W
50
150
℃
Tstg
Storage Temperature R...