Silicon NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA...
Inchange Semiconductor