Silicon Carbide Power
Schottky Diode
Features
• 3300 V
Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAL
VRRM IF @ 25 oC
QC
= 3300 V = 0.
3 A = 20 nC
Advantages
• Improved circuit efficiency (Lower overall cost) • Significantly reduced switching losses compare to Si PiN
diodes • Ease of paralleling devices without thermal runaway • Smaller heat sink requirements • Low reverse recovery current • Low device capacitance
Die Size = 1.
39 mm x 1.
39 mm
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation • High Voltage Multipliers • Military Power S...