isc Silicon
NPN Power
Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 180V(Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 1.
0V(Max)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
10
A
PC
Collector
Power
...