isc Silicon
NPN Power
Transistors
BU120
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
:VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output stage of CTV
receivers and high voltalge, fast switching and industrial application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Emitter Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
3.
0...