isc Silicon
NPN Power
Transistor
BU508A
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·High Power Dissipation-
: PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current- Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature...