isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
Drain
BUK454-800A
ID
Current-continuou
s@ TC=25℃
BUK454-800B
Ptot
Total Dissipation@TC=25℃
±30
V
2.
4 A
2.
0
85
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
THERMAL CHAR...