isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS
Gate-Source Voltage
Drain
BUK456-200A
ID
Current-continuou
s@ TC=25℃
BUK456-200B
Ptot
Total Dissipation@TC=25℃
Tj
Max.
Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
200
V
±30
V
19 A
17
150
W
175
℃
175
℃
THERM...