VCE = IC = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Doc.
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5SYA 1592-01 Jun 07 Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 6500 V DC collector current IC Tc = 85 °C 400 A Peak collector current ICM tp = 1 ms, Tc = 85 °C 800 A Gate-emitter voltage VGES -20 20 V Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 7350 W DC forward current IF 400 A Peak forward current Surge cu...

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