Part Number
|
BAV70T |
Manufacturer
|
KEC |
Description
|
SILICON EPITAXIAL PLANAR DIODE |
Published
|
Jul 3, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Volt...
|
Datasheet
|
BAV70T
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.
9V (Typ.
).
Fast Reverse Recovery Time : trr=1.
6ns(Typ.
).
Small Total Capacitance : CT=0.
9pF (Typ.
).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
85
Reverse Voltage
VR 80
Continuous Forward Current
IF 150
Surge Current (10ms)
IFSM
2
Power Dissipation
PD 200 *
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On FR-5 Board (25.
4 19.
05 1.
57mm)
UNIT V V mA A mW
A G H
BAV70T
SILICON EPITAXIAL PLANAR DIODE
C
E B
2 13
DIM MILLIMETERS A 1.
60+_ 0.
10
D B 0.
85+_...
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