Part Number
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NT5DS128M4CS |
Manufacturer
|
Nanya Techology |
Description
|
512Mb DDR SDRAM |
Published
|
Jul 6, 2016 |
Detailed Description
|
NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG
NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS
512Mb DDR SDRAM
Features
• DDR 512M bit, ...
|
Datasheet
|
NT5DS128M4CS
|
Overview
NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG
NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS
512Mb DDR SDRAM
Features
• DDR 512M bit, Die C, based on 90nm design rules • Double data rate architecture: two data transfers per
clock cycle • Bidirectional data strobe (DQS) is transmitted and
received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data
• DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and
data mask referenced to both edges of DQS • Bu...
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