2SK1933
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching
regulator
Outline
REJ03G0984-0300 (Previous: ADE-208-1332)
Rev.
3.
00 Apr 27, 2006
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1 2 3
G S
1.
Gate 2.
Drain
(Flange) 3.
Source
Rev.
3.
00 Apr 27, 2006 page 1 of 6
2SK1933
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 %
2.
Value at Tc = 25°C
Electrical Char...