isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
3
A
ID(puls)
Pulsed Drain Current
12
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
·THERMAL CHARACTERISTICS
SYMBOL
PARAME...