ACE4922BEM
Dual N-Channel Enhancement Mode Field Effect
Transistor
Description The ACE4922B is the Dual N-Channel enhancement mode power field effect
transistors are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
APPLICATIONS Low On-Resistance Fast Switching Speed Low-voltage drive Easily designed drive circuits P...