Part Number
|
ACE7332M |
Manufacturer
|
ACE Technology |
Description
|
N-Channel 30-V (D-S) MOSFET |
Published
|
Jul 10, 2016 |
Detailed Description
|
ACE7332M
N-Channel 30-V (D-S) MOSFET
Description The ACE7332M uses advanced trench technology to provide excellent RDS(O...
|
Datasheet
|
ACE7332M
|
Overview
ACE7332M
N-Channel 30-V (D-S) MOSFET
Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance.
Key Features Low rDS(on) trench technology Low thermal impedance Fast switching speed
Features
VDS(V)=30V ID=15A (VGS=10V) RDS(ON)<8.
5mΩ (VGS=10V) RDS(ON)<13mΩ (VGS=4.
5V)
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
ID(A)
13 @ VGS = 10V
14
30
18 @ VGS = 4.
5V
12
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage...
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