NP90N06VDK
60 V – 90 A – N-channel Power MOS FET Application: Automotive
Data Sheet
R07DS1297EJ0100 Rev.
1.
00
Oct 26, 2015
Description
NP90N06VDK is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
• Super low on-state resistance ⎯ RDS(on)1 = 5.
3 mΩ MAX.
(VGS = 10 V, ID = 45 A)
• Low Ciss: Ciss = 4000 pF TYP.
(VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body Diode
Source
TO-252(MP-3ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.
Steps must be taken to stop generation of st...