RB706F-40
SILICON EPITAXIAL
SCHOTTKY BARRIER DIODE
For low current rectification
Features • High reliability • Low reverse current
3 12
Marking Code: ZA
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.
3 ms) Junction Temperature Storage Temperature Range
Symbol
VRM VR IO IFSM Tj Tstg
Value 45 40 30 200 125
- 55 to + 125
Unit V V mA mA OC OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage at IF = 1 mA
Reverse Current at VR = 10 V
Reverse Breakdown Voltage at IR = 10 µA
Capacitance between Terminals at VR = 1 V, f = 1 MHz
Symbol Min.
Typ.
Max.
Unit
VF -
- 0.
37 V...