Part Number
|
RJH65T47DPQ-A0 |
Manufacturer
|
Renesas |
Description
|
IGBT |
Published
|
Jul 12, 2016 |
Detailed Description
|
Preliminary Datasheet
RJH65T47DPQ-A0
650V - 45A - IGBT Application: Power Factor Correction circuit
R07DS1291EJ0101 Re...
|
Datasheet
|
RJH65T47DPQ-A0
|
Overview
Preliminary Datasheet
RJH65T47DPQ-A0
650V - 45A - IGBT Application: Power Factor Correction circuit
R07DS1291EJ0101 Rev.
1.
01
Oct 22, 2015
Features
Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 45 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package Trench gate and thin wafer technology (G7H series) High speed switching
tf = 45 ns typ.
(at VCC = 400 V, VGE = 15 V , IC = 45 A, Rg = 10 , Ta = 25°CInductive load) Operation frequency (20kHz ≤ f ˂ 100kHz) Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
4 123
1.
Gate 2.
Collector G 3.
Emitter 4.
Collector
E
Absolute...
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