IGBT MODULE MBM500E33E2-R Silicon N-channel IGBT 3300V E2 version Spec.
No.
IGBT-SP-14005 R0 P1 FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.
 Low driving power due to low input capacitance MOS gate.
 Low noise recovery: Ultra soft fast recovery diode.
 High thermal fatigue durability: (delta Tc=70K, N30,000cycles) AlSiC base-plate/AlN substrate ABSOLUTE MAXIMUM RATINGS (Tc=25oC ) Item Symbol Unit MBM500E33E2-R Collector Emitter Voltage Gate Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Operating Junction Temperature Maximum Junction Temperature Storage Temperature Isolation Voltage Scr...

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