SEMICONDUCTOR
TECHNICAL DATA
FTB1366
FTB1366
TRANSISTOR (
PNP)
FEATURES Low VCE(sat): VCE(sat)=-1.
0V(Max.
)(IC/IB=-2A/-0.
2A) Complementary to FTD2058
TO-220F
1.
BASE 2.
COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC
Collector Current -Continuous
-3
A
PC Collector power dissipation
2W
TJ Junction temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
3.
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown ...