Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 5.
4 A VDSS = 600 V RDS(on) max = 0.
385 Ω D G S TO-220 ABFP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 3.
4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V Maximum Ratings 600 V ± 20 V 5.
4 A 3.
7 A 225 mJ 0.
3 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V; ID = 5.
2 A VDS = VGS; ID = ...

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