NPN NPN EPITAXIAL SILICON
TRANSISTOR
R
3DG9013
MAIN CHARACTERISTICS
Package
IC VCEO PC
500mA 20V 625mW
APPLICATIONS
z
z High frequency switching power
supply
z
z High frequency power transform
z z Commonly power amplifier circuit
z z z 3DG9012 z（RoHS）
FEATURES
z Epitaxial silicon z High switching speed z Complementary to 3DG9012 z RoHS product
TO-92
ORDER MESSAGE
Order codes
Marking
3DG9013-O-T-N-C 3DG9013-O-T-N-A
9013 9013
Halogen Free NO NO
Package TO-92 TO-92
Packaging Bag Brede
：201504A
1/5
R
ABSOLUTE RATINGS (Tc=25℃)
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Parameter Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector C...