Freescale Semiconductor Technical Data Document Number: A2I20D020N Rev.
0, 5/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz.
This multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.
1800–2200 MHz  Typical Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.
5 W Avg.
, Input Signal PAR = 9.
9 dB @ 0.
01% Probability on CCDF.
(1) Frequency Gps (dB) PAE (%) 1800 MHz 31.
0 19.
7 1900 MHz 31.
0 21.
7 2000 MHz 31.
1 22.
1 2100 MHz 31.
4 21.
...

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