Part Number
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P75N06 |
Manufacturer
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Pan Jit International |
Description
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PJP75N06 |
Published
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Jul 17, 2016 |
Detailed Description
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PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ...
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Datasheet
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P75N06
|
Overview
PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.
5V,IDS@30A=18mΩ
• Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA • Case: TO-220 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.
3 • Marking : P75N06
Drain Gate
Source
PIN Assignment
1.
Gate 2.
Drain 3.
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PA ...
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