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Part Number
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CM100E3U-12H |
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Manufacturer
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Mitsubishi Electric Semiconductor |
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Description
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IGBT Module |
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Published
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Mar 23, 2005 |
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Detailed Description
|
MITSUBISHI IGBT MODULES
CM100E3U-12H
HIGH POWER SWITCHING USE INSULATED TYPE
TC Measured Point
E F G E2 A B H J D C
G2...
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Datasheet
|
CM100E3U-12H
|
Overview
MITSUBISHI IGBT MODULES
CM100E3U-12H
HIGH POWER SWITCHING USE INSULATED TYPE
TC Measured Point
E F G E2 A B H J D C
G2 G2
U C1
3-M5 Nuts O P O Q
CM
C2E1
L
2 - Mounting Holes (6.
5 Dia.
)
V
M
N TAB#110 t=0.
5
P
S
R
T
E2 G2
Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery...
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