isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
20N15
·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
075Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications in power supplies ·Motor controls,high efficient DC to DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25℃
90
W
Tj
Max.
Operating Junc...