INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
21N60
·FEATURES ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
32Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
600 ±30
V V
ID Drain Current-Continuous
21 A
IDM Drain Current-Single Plused
84 A
PD Total Dissipation @TC=25℃
140 W
Tj Max.
Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, J...